Elemental vacancy diffusion database from high-throughput
first-principles calculations for FCC and HCP structures
Thomas Angsten, Tam Mayeshiba, Henry Wu, Dane Morgan
Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University
Avenue, Madison, WI 53706
Abstract. This work demonstrates how databases of diffusion-related properties can be developed from
high-throughput ab initio calculations. The formation and migration energies for vacancies of all
adequately stable pure elements in both the face-centered cubic (FCC) and hexagonal close packing (HCP)
crystal structures were determined using ab initio calculations. For HCP migration, both the basal plane and
z-direction nearest-neighbor vacancy hops were considered. Energy barriers were successfully calculated
for forty-nine elements in the FCC structure and forty-four elements in the HCP structure. These data were
plotted against various elemental properties in order to discover significant correlations. The calculated
data show smooth and continuous trends when plotted against Mendeleev numbers. The vacancy formation
energies were plotted against cohesive energies to produce linear trends with regressed slopes of 0.317 and
0.323 for the FCC and HCP structures respectively. This result shows the expected increase in vacancy
formation energy with stronger bonding. The slope of approximately 0.3, being well below that of one
predicted by a simple fixed bond strength model, is consistent with a reduction in the vacancy formation
energy due to many-body effects and relaxation. Vacancy migration barriers are found to increase nearly
linearly with increasing stiffness, consistent with the local expansion required to migrate an atom. A simple
semi-empirical expression is created to predict the vacancy migration energy from the lattice constant and
bulk modulus for FCC systems, yielding estimates with errors of approximately 30%.
1. Introduction
Many materials phenomena are affected by atomic diffusion properties, and knowledge of these
properties is of great technological importance in applications ranging from structural materials to
electrochemical devices. Extensive experimental efforts have been exerted over many decades in order to
determine the activation energies for vacancy diffusion, Q, in pure elements and alloys. The vacancy
diffusion mechanism is the dominant mechanism of self-diffusion in monoatomic close-packed crystals
[1]. As attempt frequencies are relatively similar, within a simple Arrhenius model, the quantity Q largely
determines self-diffusion properties for elements in close-packed structures. The activation enthalpy for
vacancy diffusion can be found by summing together the enthalpy of vacancy formation, H
vf
, and the
vacancy migration enthalpy, H
vm
. Accurate experimental determination of these two quantities can be
quite challenging. The large range of vacancy formation enthalpies reported from the different
experimental methods (e.g., quenching, positron annihilation, etc.) indicates that H
vf
determination is non-
trivial. One complication that is commonly encountered in experimentally determining H
vf
is the isolation
of monovacancy contributions from those of other defects, such as divacancies [2]. H
vm
can be directly
measured in quenching experiments. However, this often leads to less accurate results than simply
subtracting the vacancy formation enthalpy from Q found in diffusion experiments [1, 3]. Thus, the
accuracy of H
vm
is dependent on methods used to find H
vf
, making both quantities difficult to determine
consistently and accurately. These difficulties partially provide the incentive to use theoretical alternatives
to calculate the diffusion properties of materials.
One theoretical approach that has gained popularity in recent decades is the use of ab initio Density
Functional Theory (DFT) based quantum codes in order to determine materials properties. DFT is an
efficient technique used to solve the fundamental quantum-mechanical equations for complex systems of
atoms. DFT has had good success in predicting accurate diffusion properties [4-6]. The evolution of fast
and robust DFT codes has made it possible to automate computational techniques in which large amounts
This draft is published as: Elemental vacancy diffusion database from high-throughput first-principles calculations,
Thomas Angsten, Tam Mayeshiba, Henry Wu, Dane Morgan, New Journal of Physics (2014)
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of data relevant to a specific materials property can be obtained [7]. High-throughput ab initio
calculations are being used to study an increasing range of problems, including surface energy
determination [8], crystal structure prediction [9], Band structure calculation [10], catalyst design [11],
and Li-ion battery cathode design [12]. A number of tools to aid in high-throughput computation are also
becoming available, including AFLOW [10], the Materials Project [13], and the Atomic Simulation
Environment [14]. However, little work has been done to develop databases of basic elemental or alloy
diffusion data using high-throughput ab initio methods.
There are a few key advantages to having a large database of diffusion properties formulated from
automated ab initio calculations. The consistency of the methods used to obtain the results makes for
more reliable relative values. Furthermore, using ab initio techniques allows one to study systems that are
theoretical or do not exist in a stable natural form. Predictions for metastable systems can be useful if
these systems are ever synthesized. These predictions are also often necessary when fitting the
dependence of diffusion energetics on alloy composition. Finally, having a consistent and consolidated
database allows one to establish correlations between diffusion and system properties. These correlations
could be used as a materials screening tool that would help facilitate the choice of materials for
technological applications. This work will demonstrate the utility of high-throughput calculations for
establishing an elemental diffusion database, and this database will be used to explore trends in vacancy
formation and migration energetics. While this work is focused on simple pure elements as an initial
demonstration, it suggests a path to a more comprehensive effort currently underway that is focused on
treating diffusion in alloys with the same high-throughput approach.
2. Computational Methods
2.1. Total Energy Calculations
All calculations were performed using the Vienna Ab Initio Simulation Package (VASP) version 5.2.2, a
quantum mechanical code based on plane-wave density functional theory [15-18]. The workflows of the
calculations were automated using the MAterials Simulation Toolkit (MAST), a code package developed
at the University of Wisconsin-Madison and built on the pymatgen toolset [19]. For all of the studied
materials, the PerdewBurkeErnzerhof (PBE) exchangecorrelation functional with the Generalized
Gradient Approximation (GGA) for the exchangecorrelation energy was used, and the projector
augmented wave method (PAW) was implemented to model the electron-ion interactions within each of
these systems [20-23]. All ionic relaxations were performed using a conjugate gradient algorithm. For
these, a first-order Methfessel-Paxton smearing method [24] was used with a smearing width of 0.2 eV.
For all ground state energy calculations with fixed ions, a tetrahedron method with Blöchl corrections was
used with the same smearing width. Spin-polarization was neglected for all systems with the exception of
Ni, Co, and Mn in both FCC and HCP. Because Fe is non-magnetic in the FCC structure [25], only HCP
Fe was attempted with spin-polarization (although no moment was found). For this subgroup of element-
structure combinations, non-spin-polarized and spin-polarized results are both presented.
2.2. Calculation Parameters
The size of the supercell and the density of points in the k-point mesh were held constant for all elements
in a given crystal structure. For the FCC systems, a MonkhorstPack [26] 4x4x4 k-point mesh and a
3x3x3 supercell of the conventional cell consisting of 108 lattice sites were used. For the HCP systems, a
Gamma-centered 9x9x9 k-point mesh and a 3x3x2 supercell of the conventional cell consisting of 36
lattice sites were used. Table 1 summarizes the results of convergence testing for k-point mesh performed
on Aluminum in FCC and Magnesium in HCP. Convergence with cell size was tested by using a finite-
size scaling approach. Following previous literature we plotted the values of interest (H
vf
and H
vm
) as a
function of N
atoms
-1
and looked for trends to enable extrapolation to infinite cell size [27-31]. In general
This draft is published as: Elemental vacancy diffusion database from high-throughput first-principles calculations,
Thomas Angsten, Tam Mayeshiba, Henry Wu, Dane Morgan, New Journal of Physics (2014)
3
we found very robust fits for a simple linear dependence versus N
atoms
-1
, consistent with the defect
interactions being based on strain.
Figure 1 shows the effect of cell size on H
vf
for Au and Mg in both the FCC and HCP structures. Based on
figure 1, the estimated size-effect error for H
vf
is 20-30 meV for both the FCC and HCP systems. Almost
no change in the HCP vacancy formation energy is observed with respect to system size, suggesting that
the 3x3x2 supercell is sufficient for HCP calculations. Figure 2 shows the effect of cell size on H
vm
for Au
and Mg in both the FCC and HCP structures. From figure 2, the estimated size-effect error for H
vm
is
again between 20-30 meV for both the FCC and HCP systems. While migration energies were not
calculated for the 6x6x4 HCP supercell due to computational limitations, both basal and c-axis migration
energies show little dependence with system size and are sufficiently converged. Plane wave cutoff
energies were assigned for each element at 1.5 times the maximum energy cutoff in the PAW potential
file (denoted ENMAX) for that element. This energy cutoff gives errors in the reference energy of about 5
meV/atom or less. In both the FCC and HCP structures, the same pseudopotential was used for each
element.
Table 1. Results of convergence tests performed on FCC aluminum and HCP magnesium.
Element
K-point mesh at constant size
a
H
vf
(eV)
H
vm
(eV)
Aluminum (FCC)
0.018
0.021
Magnesium (HCP)
0.009
0.007
a
108 atom cell for FCC aluminum and 36 atom cell for HCP magnesium. These errors are obtained by comparing
Monkhorst-Pack k-point meshes of 4x4x4 to 8x8x8 for aluminum and Gamma-centered k-point meshes of 9x9x9
to 13x13x13 for magnesium.
Figure 1. Plots showing the effect of H
vf
with cell size for two systems in (a) FCC and (b) HCP structures. Based
on linear extrapolation to 1/N = 0 for these test cases, the size-effect error for both the FCC and HCP systems
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treated in this paper is around 20-30 meV. Note that, in the case of Mg in FCC and Au in HCP, these are the
vacancy formation energies in a metastable host structure.
Figure 2. Plots showing the effect of H
vm
with cell size for two systems in (a) FCC and (b) HCP structures. Based
on linear extrapolation to 1/N = 0 for these test cases, the size-effect error of the migration energy for both the FCC
and HCP systems treated in this paper is between 20-30 meV. Note that the migration energies for the 6x6x4 HCP
supercell were not calculated.
2.3. Parameters Used in Saddle Point Calculations
The Climbing Image Nudged Elastic Band (CI-NEB) [32] method was used to obtain the vacancy
migration enthalpy, H
vm
, of each system. This procedure involves finding the saddle point structure and
the associated minimum energy pathway using a chain of images representing intermediate structures that
are linearly interpolated from two endpoint structures. Both endpoint structures consisted of cells
containing a monovacancy at one site (107 on-lattice atoms + 1 vacancy or 35 on-lattice atoms + 1
vacancy). In all cases, the vacancies were positioned at nearest-neighbor sites with respect to the
migrating atom. For all CI-NEB -based calculations, a 5.0 eV/Å
2
spring constant was used to maintain a
constant distance between the images. A quasi-Newton algorithm with a force scaling constant of 0.5 was
utilized in the relaxation of ions into their respective ground states. Further detail regarding the
calculation of migration energies is given in section 2.5.
2.4. Calculation of the Vacancy Formation Enthalpy
The vacancy formation enthalpy, H
vf
, was determined by comparing the total energy of the cell containing
the monovacancy with that of the undefected cell. The undefected cell energy is scaled by a fraction in
order to conserve the appropriate number of atoms. This calculation is represented in (1):


 

(1)
In the above equation, N is the number of lattice sites, H
N-1
is the enthalpy of the defected cell containing
a single vacancy, and H
N
is the enthalpy of the undefected cell. The calculation of H
vf
using VASP
involved a series of relaxations of both an undefected and a defected cell. For each element, calculations
began with the geometric optimization of the undefected cell, allowing the cell volume and ionic positions
0 0.01 0.02 0.03 0.04
N
-1
atoms
0.3
0.4
0.5
0.6
0.7
FCC Vacancy Migration Energy [eV]
2´2´2
3´3´3
4´4´4
Au, FCC
Mg, FCC
0 0.01 0.02 0.03 0.04
N
-1
atoms
0.3
0.4
0.5
0.6
0.7
HCP Vacancy Migration Energy [eV]
3´3´24´4´36´6´4
Au, HCP c-axis
Au, HCP basal
Mg, HCP c-axis
Mg, HCP basal
(a) (b)
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to relax to their minimum energy states. Multiple optimizations were performed until the total energy of
the undefected cell was converged to within 1 meV/cell. Once this was achieved, the electronic degrees of
freedom of the system were re-optimized in a fixed-ion calculation of the total energy to give H
N
in (1).
To get H
N-1
in (1), a new cell was then formed from the relaxed undefected cell by adding a single
vacancy of arbitrary placement. A similar series of calculations were performed using the same energy
threshold at a fixed volume equal to that of the relaxed undefected cell. From these resulting energies, H
vf
was calculated. Note that all calculations are performed at approximately zero pressure so the enthalpy
and energy (H
vf
and E
vf
) are taken to be equal in these calculations. Therefore, the energy is calculated and
set equal to the enthalpy.
2.5. Calculation of the Vacancy Migration Enthalpy
Transition state theory [33] was applied to find H
vm
for each system. H
vm
was obtained by comparing the
total enthalpy of an endpoint containing a monovacancy with the total enthalpy of the system containing
an atom at the transition-state position of a migration event. This is quantified in (2):
H
vm
= H
N-1, TS
H
N-1, IS
(2)
In the above equation, TS signifies the transition state and IS signifies the initial state of the system. As
with formation energies, the vacancy migration enthalpy and energy (H
vm
and E
vm
) are taken as equal, as
the calculations are performed at approximately zero pressure. For computational efficiency, an exact
construction of the second endpoint was made from the first using symmetry in both the FCC and HCP
systems. This method involved translating each atom of the first endpoint by a vector equivalent to a
nearest-neighbor hop associated with each crystal system.
The first and second endpoint structures were taken and used to linearly interpolate a single transition
state image used in the CI-NEB calculation. H
N-1,TS
in (2) is given by the energy of this intermediate
image, while the initial-state enthalpy, H
N-1,IS
, can be obtained from the total energy of either equivalent
endpoints. To ensure that the single-image CI-NEB calculations discovered an energy maximum, the
migrating atom of the linearly-interpolated middle image was displaced by a fraction of an angstrom in a
symmetry-breaking direction. This displacement guaranteed that the climbing image would not be stuck
in a local minimum due to the existence of a high-symmetry point. Since all of the atom hops studied in
this work are symmetric, this approach will find the maximum of the potential energy surface assuming
the migration path has one or two maxima. If the energy surface has three or more maxima then they
could be missed by our approach, but no examples of such complex energy surfaces were found in the
subset of four element-structure systems checked with additional images.
2.6. Calculation of the Cohesive Energy and Bulk Modulus
As the formation and migration of vacancies can both be considered bond-breaking processes, it is of
interest to see how the energy barriers correlate with the cohesive energy, E
C
, of each element. Cohesive
energies were calculated as the difference in energy per atom between the crystal and the single atom
system. The latter reference energy was calculated with a Gamma-centered 1x1x1 k-point mesh in a
12x13x14Å cell at an energy cutoff of 600 eV. In the case of Ni, the asymmetric cell used for the atom
calculations could not be converged despite extensive efforts, and a cell with 10x10x10Å dimensions was
used. The cohesive energy of Ni therefore runs a risk of errors associated with inadequate symmetry
breaking in the ground state of its atom reference state. All isolated atom calculations were performed
with spin-polarization.
The bulk modulus B
0
and its pressure derivative B
0
were obtained by fitting energyvolume data of the
undefected cell to the third-order BirchMurnaghan equation of state (EOS), shown in (3) [34]. The fit
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was performed using seven energy-volume pairs, in addition to the undefected cell volume V
0
and energy
E
0
, with volumes ranging from 80%-112% of V
0
.




 

 
  
(3)
2.7. Choice of Viable Elemental Systems
Figure 3 shows all of the element-structure combinations for which calculation of diffusion properties was
attempted. In the FCC systems, elements with atomic numbers 1-83 as well as 89-91 were attempted. In
the HCP systems, elements with atomic numbers 1-83 with the exclusion of 59-71 were attempted. For
both structures, exclusions were made on the basis of likelihood of success and estimated computing time.
If systems in either structure were unable to relax after the addition of a vacancy, calculations for that
system were discontinued.
Figure 3. Periodic table denoting the element-structure combinations for which calculations were attempted.
2.8. Omission of Phonon Calculations
The attempt frequency of a migrating atom can be determined from ab initio phonon calculations [5]. The
calculation of phonons was omitted from this work as they require large amounts of computing resources,
but these calculations could easily be implemented in future work. With knowledge of the attempt
frequencies and the migration energetics in the elemental systems, the vacancy self-diffusion coefficient,
D, can be calculated.
3. Results and Discussion
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Table A1 and table A2 found in the appendix list all of the data calculated in this work for elements in the
FCC and HCP structures respectively. Comparisons to selected experimental data are given in figures 4a
and 4b. In these figures, as throughout figures in the paper, lines are superimposed as a guide to help the
reader see trends in the data. For the FCC systems, calculated vacancy formation enthalpies are generally
lower than the corresponding experimental data. It has previously been proposed that, due to an intrinsic
error in treating surfaces, GGA DFT can underestimate H
vf
for certain systems [35]. The intrinsic surface
error involved can be removed by adding a correction value that is a function of electron density [35],
although this correction is not included in this work. Based on the limited data in figure 4a, this same
error is not seen with the HCP systems, as the calculated HCP vacancy formation enthalpies generally
overestimate the experimental results. Further work is necessary to understand why the typical errors
between FCC and HCP, which are both quite similar close-packed structures, should be so different. The
H
vm
values calculated in this work generally agree well with the experimental data.
Figure 4. (a) H
vf
values from this work versus experimental data [2, 36, 37] for the FCC and HCP systems. FCC
Fe is non-spin-polarized in this figure. Calculations including spin-polarization are here forth denoted by the
mag
subscript, where all labels not containing this subscript denote non-spin-polarized calculations. (b) H
vm
plotted
against experimental data [2, 36-39] for both the FCC and HCP systems. Only in-plane HCP migration data are
included in this plot. All data presented in both of these plots are for elements in their stable, naturally occurring
crystal structures.
It should be noted that previous ab initio work has identified an anomalous monovacancy migration
pathway for Group IV HCP metals with BCC-HCP phase transitions at higher temperatures. For
migration in the basal plane, the migrating atom finds a BCC-like atomic environment along the pathway
which is an energy local minimum that exists between the two saddle points [40]. It is very possible that
the naturally BCC elements treated in this work follow this tendency when placed in the HCP structure.
Because only a single image is used in the CI-NEB calculations, it is possible that the single image falls
into this local minimum, thereby underestimating the migration barrier.
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In figure 5 and figure 6, the H
vf
and H
vm
values respectively are plotted against the elements’ Mendeleev
numbers. The Mendeleev number is a phenomenological coordinate that captures size, electronegativity,
valence, and bond orbitals in a single chemical scale in which each element is assigned one unique
number [41]. It is important to note in these figures that the legend corresponds to the natural crystal
structure of each element at standard temperature and pressure (STP), not to the structure in which the
elements were relaxed. These plots show that the vacancy formation and migration energies are generally
smooth and continuous when plotted as a function of chemical species. Notable in both figures is the peak
formed by the middle transition metals (Re, Os, Tc, Ru, Mn, and Fe). Also notable are the troughs formed
by the weakly interacting elements with essentially zero defect energetics (He, Ar, Kr etc.).
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Figure 5. H
vf
versus Mendeleev number for elements relaxed in the (a) FCC structure and (b) HCP structure. The
legend corresponds to the natural crystal structure of each element at standard temperature and pressure (STP),
not the structure in which the elements were relaxed. In the case of elements that are gas-phase at room
temperature, the legend corresponds to high pressure or low temperature -induced solid phase structures [42].
Gray lines are superimposed as a visual guide for seeing trends. Gaps in the guiding line correspond to portions of
the plot that are difficult to interpret due to insufficient or scattered data.
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Figure 6. H
vm
versus Mendeleev number for elements relaxed in the (a) FCC structure and (b) HCP structure. All
data in this plot and any future plots containing HCP migration barriers pertain exclusively to the in-plane
migration barriers. Gray lines are superimposed as a visual guide for seeing trends. Gaps in the guiding line
correspond to portions of the plot that are difficult to interpret due to insufficient or scattered data.
The results in figures 5 and 6 suggest at least some correlation between H
vf
and H
vm
and the bonding
strength of the systems. To see these trends more clearly, in figure 7 and figure 8, the calculated H
vf
and
H
vm
values are plotted against the cohesive energy of each element. Figures 7a and 7b show an overall
trend of linearly increasing vacancy formation energy with increasing cohesive energy for both structures.
A linear regression was performed on both sets of data. For the FCC data, a fitted slope of 0.317 was
found with R
2
= 0.655 (RMS Error = 0.477 eV). For the HCP data, a slope of 0.323 was found with R
2
=
0.683 (RMS Error = 0.501 eV). These results are consistent with the fact that a simple fixed bond-
strength model is not sufficient in describing the energetics of vacancy formation. Because the remaining
bonds nearby are strengthened when the vacancy is formed, and because the lattice can lower its energy
by relaxing into the void space formed by the missing atom, it is common for H
vf
to fall somewhere
between 0.2E
C
and 0.8E
C
[38]. Figures 8a and 8b show a continuous trend of H
vm
with E
C
. A fit was
performed using data points with cohesive energies less than 6 eV. In this regime, the data appears linear
with a slope of 0.191 (RMS Error = 0.243 eV) for the FCC data and 0.159 (RMS Error = 0.209 eV) for
the HCP data. The effects of the cohesive energy are especially strong when E
C
> 6 eV. In this range,
there appears to be a non-linear increase of the migration enthalpy with increasing cohesive energy. These
trends are consistent with the intuition that the migrating atom’s mobility is strongly hindered by an
increasingly cohesive lattice. However, the trend of H
vm
with E
C
does not appear to be simply linear, and a
change in the migration physics may occur for some of the most stable elements. These simple
correlations could provide quick screening for H
vf
and H
vm
as the cohesive energy is much faster to
calculate than either H
vf
or H
vm
.
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Figure 7. H
vf
versus E
C
for elements relaxed in the (a) FCC structure and (b) HCP structure. The drawn lines are
fitted with slopes of 0.317 for the FCC data (R
2
= 0.655, RMS Error = 0.477 eV), and 0.323 for the HCP data (R
2
= 0.683, RMS Error = 0.501 eV).
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Figure 8. H
vm
versus E
C
for elements relaxed in the (a) FCC and (b) HCP structures. A fit was performed using
data points with cohesive energies less than 6 eV. In this regime, the data appears linear with a slope of 0.191
(RMS Error = 0.243 eV) for the FCC data and 0.159 (RMS Error = 0.209 eV) for the HCP data. After this linear
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regime, H
vm
increases sharply with cohesive energy, showing that a change in the migration physics may occur
for some of the most stable elements. A gray dashed line is added as a visual guide to aid in seeing the increase.
As atomic migration can be considered a bond-breaking phenomenon, it is intuitively reasonable that H
vm
might scale with cohesive energy. However, the migrating atom must also push its way through a
constrained space, and therefore H
vm
might additionally be expected to scale with elastic properties. This
is explored further in figures 9a and 9b, in which the calculated H
vm
values are plotted against the
calculated bulk moduli of the corresponding elements in the FCC or HCP structures. The plots for both
structures show a linearly increasing trend with bulk modulus with slopes of 5.5×10
-3
eV/GPa (R
2
= 0.70,
RMS Error = 0.329 eV) for FCC (figure 9a) and 5.1×10
-3
eV/GPa (R
2
= 0.79, RMS Error = 0.273 eV) for
HCP (figure 9b).
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Figure 9. H
vm
versus bulk modulus for elements relaxed in the (a) FCC structure and (b) HCP structure. The
drawn lines are fitted with slopes of 5.5×10
-3
eV/GPa (R
2
= 0.70, RMS Error = 0.329 eV) for the FCC data, and
5.1×10
-3
eV/GPa (R
2
= 0.79, RMS Error = 0.273 eV) for the HCP data. The bulk moduli are obtained by
calculations done in this work and pertain to the FCC or HCP structure.
The linear trends seen in figures 9a and 9b suggest a simple relationship between the migration energy
and the bulk modulus. Previous work has derived expressions relating H
vm
to elastic properties in the form

, where is a structure factor, is the lattice constant, and
is an average elastic
constant formed from c
11
, c
12
, and c
44
(see Ehrhart p. 98) [2, 43]. Using the bulk modulus as the elastic
constant and performing a linear fit (R
2
= 0.84, RMS Error = 0.240 eV) on the H
vm
data versus
yields the expression given in (4):


(4)
This equation applies only to FCC systems due to the relatively more complex symmetries in the HCP
structure. Attempts were made to find a similar expression for the H
vm
of HCP systems by substituting the
volume of four HCP atoms for a
3
in (4) and performing a linear fit. However, the resulting equation
provided no better representation of H
vm
than the regression against the bulk modulus itself shown in
figure 9b. The validity of (4) is depicted in figure 10 in which H
vm
values given by (4) are plotted against
the ab initio H
vm
values obtained in this work.
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Figure 10. Ab initio H
vm
values plotted against values generated using (4). These data correspond only to the
natural and metastable FCC structure-element combinations. The RMS error is 0.24 eV with a maximum error of
0.56 eV.
4. Conclusion
Using a high-throughput approach, a large elemental diffusion energetics database was created that
contains data for both metastable and naturally occurring systems. Having such a database is
advantageous in that the methods used to calculate the results are rigorously consistent, accurate, and able
to provide data for theoretical systems on which it is potentially impossible to perform experiments. The
inclusion of data for metastable systems is useful if these systems are ever synthesized or if metastable
predictions are required as end-member data inputs for trend fitting software, such as the thermodynamic
simulations performed in CALPHAD.
By plotting the data against various chemical, physical, and mechanical properties, several important
controlling factors for diffusion in the elemental systems have been discovered. These correlations are
fundamental to understanding diffusion in various systems. The vacancy formation enthalpy was shown
to depend linearly on the cohesive energy, and the vacancy migration enthalpy plotted against cohesive
energy showed an initial linear region followed by a rapidly increasing region for the most stable systems.
As vacancy formation and migration can be interpreted as bond-breaking phenomena, cohesive energy as
a controlling factor makes intuitive sense. The relationship shown by equation (4) demonstrates that there
is also a strong correlation between the bulk modulus and the migration enthalpy. As the migrating atom
must push through a constrained space, incompressibility as a controlling factor also makes intuitive
This draft is published as: Elemental vacancy diffusion database from high-throughput first-principles calculations,
Thomas Angsten, Tam Mayeshiba, Henry Wu, Dane Morgan, New Journal of Physics (2014)
16
sense. It is interesting to observe that, in general, the metastable data fit into the same trends as those
formed by data from the naturally occurring systems.
The above correlations could all be used as screening tools for more complicated systems, such as alloys,
although the validity of the correlations must be demonstrated for alloy systems. Properties such as the
cohesive energy and the bulk modulus are less computationally intensive to compute, and therefore
knowledge of these properties as controlling factors for migration could be useful in the screening process
for specific migration energetics. This work has by no means explored all of the potential ways that the
database can be used to discover trends of diffusion energetics with other properties of solids. Additional
high-throughput diffusion work will increasingly generate more data and allow new correlations to be
discovered.
Acknowledgements
Financial support for Thomas Angsten provided by the US Department of Energy (DOE) Nuclear
Engineering University Program (NEUP) program under grant No. 10-888. Financial support for Tam
Mayeshiba provided by the National Science Foundation (NSF) Graduate Fellowship Program under
grant No. DGE-0718123. Financial support for Dane Morgan, Henry Wu and travel, materials and
supplies provided by NSF Software Infrastructure for Sustained Innovation (SI
2
), award No. 1148011.
MAST was developed at the University of Wisconsin-Madison by Tam Mayeshiba, Glen
Jenness, Thomas Angsten, Henry Wu, and Parker Sear under NSF award No. 1148011. This
research used resources of the National Energy Research Scientific Computing Center (NERSC), which is
supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-
05CH11231. NERSC computational resources were provided through the Center for Nanophase Materials
Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division,
Office of Basic Energy Sciences, U.S. Department of Energy. The authors gratefully acknowledge helpful
discussions with M. Asta and K. Ding.
Appendix
Table A1. (FCC) Listing of the cohesive energy, E
coh
; bulk modulus, K; pressure derivative of the bulk
modulus, K’; equilibrium atomic volume of the undefected cell,
; and diffusion energetics, H
vf
and H
vm
, for
elements relaxed in the FCC structure. See section 2 (2.6 for columns 2-4, 2.4 and 2.5 for columns 6 and 7) to
see how these parameters were defined and calculated.
This draft is published as: Elemental vacancy diffusion database from high-throughput first-principles calculations,
Thomas Angsten, Tam Mayeshiba, Henry Wu, Dane Morgan, New Journal of Physics (2014)
17
Symbol E
coh
(eV/atom) K (GPa) K'

3
/atom) H
vf
(eV) H
vm
(eV)
Ac
3.70
21.63
2.03
45.37
1.26
0.45
Ag
2.49
84.11
5.15
17.87
0.68
0.70
Al
3.43
76.90
4.23
16.47
0.61
0.58
Ar
0.02
1.60
3.45
45.00
0.01
0.06
Au
2.99
136.19
7.45
18.07
0.40
0.53
Ba
1.87
8.01
2.81
64.13
1.09
0.36
Be
3.64
116.96
3.90
7.88
-0.06
a
0.75
Ca
1.91
16.82
1.70
42.17
1.13
0.47
Cd
0.74
41.66
5.71
22.60
0.30
0.23
Ce
4.58
37.65
4.10
26.10
1.30
0.54
Co
4.92
251.54
5.17
10.30
1.84
1.45
Co
mag
5.11
209.89
5.07
10.90
1.79
1.01
Cs
0.70
2.40
2.36
116.46
0.34
0.13
Cu
3.48
136.99
5.86
11.97
1.07
0.72
Dy
b
4.23
-
-
31.37
1.72
-
Er
1.55
16.02
2.66
40.96
1.02
0.47
Fe
4.69
283.59
4.89
10.22
2.32
1.38
Ga
2.61
29.64
6.02
18.91
-0.04
a
0.18
Ge
b
3.40
-
-
19.51
0.10
-
He
0.01
1.60
3.36
16.54
0.00
0.02
Hf
6.41
107.35
3.59
22.26
2.09
0.81
Ho
4.20
40.86
4.04
30.88
1.74
0.73
In
2.31
33.65
4.53
27.33
0.28
0.23
Ir
7.23
345.27
5.44
14.53
1.55
2.54
K
0.86
3.20
6.19
73.60
0.34
0.16
Kr
0.02
0.80
7.90
57.44
0.00
0.07
La
4.22
24.83
3.36
37.10
1.44
0.21
Li
1.61
13.62
3.75
20.22
0.60
0.13
Mg
1.49
36.05
4.04
23.03
0.82
0.41
Mn
c
3.76
276.38
5.42
10.73
2.38
0.65
Mn
mag
c
3.76
275.57
5.58
10.72
2.36
0.69
Na
1.11
9.61
3.08
35.08
0.38
0.14
Ni
4.77
197.87
5.29
10.85
1.39
0.94
Ni
mag
4.83
193.06
5.45
10.90
1.43
1.08
Os
8.17
398.14
4.99
14.29
2.75
2.73
Pa
6.86
96.13
4.16
25.21
1.54
0.77
Pb
2.94
39.25
4.07
31.69
0.45
0.54
Pd
3.71
165.83
6.62
15.37
1.16
0.95
This draft is published as: Elemental vacancy diffusion database from high-throughput first-principles calculations,
Thomas Angsten, Tam Mayeshiba, Henry Wu, Dane Morgan, New Journal of Physics (2014)
18
Pr
b
3.58
-
-
23.79
0.76
-
Pt
5.45
246.74
6.10
15.67
0.61
1.24
Rb
0.76
2.40
7.13
90.81
0.30
0.14
Re
7.73
366.10
4.73
14.94
2.94
1.81
Rh
5.63
250.74
5.86
14.13
1.57
1.79
Ru
6.56
314.03
4.81
13.88
2.51
1.85
Sc
4.09
54.47
4.07
24.43
2.07
0.60
Sn
3.11
46.46
6.10
27.82
0.26
0.38
Sr
1.61
11.22
3.72
54.74
0.95
0.45
Ta
b
8.09
198.67
3.86
18.63
2.23
-
Tb
4.26
38.45
4.55
31.88
1.75
0.71
Tc
6.84
298.81
4.91
14.50
2.62
1.17
Th
6.34
55.28
3.50
32.07
1.92
1.25
Ti
5.43
102.54
2.89
17.25
1.95
0.45
Tl
1.99
27.24
5.55
30.50
0.37
0.10
W
b
7.98
-
-
16.25
1.67
-
Xe
0.03
0.80
2.22
80.21
0.01
0.09
Y
4.14
38.45
4.10
32.35
1.72
0.67
Zr
6.21
90.52
4.42
23.26
2.02
0.50
a
These slightly negative values signify a lack of stability for these element-structure combinations.
b
The instability of these elements in the FCC structure precluded the gathering of certain data.
c
Due to convergence issues, FCC Mn and Mn
mag
properties were calculated with a different PAW-PBE pseudopotential
than that used to calculate HCP Mn properties.
Table A2. (HCP) Listing of the cohesive energy, E
coh
; bulk modulus, K; pressure derivative of the bulk modulus, K’;
equilibrium atomic volume of the undefected cell,
; and diffusion energetics, H
vf,
H
vm
(in-plane), and H
vm ||
(out-of-
plane) for elements relaxed in the HCP structure. See section 2 (2.6 for columns 2-4, 2.4 and 2.5 for columns 6 through
8) to see how these parameters were defined and calculated.
Symbol E
coh
(eV/atom) K (GPa) K'

3
/atom) H
vf
(eV) H
vm
(eV) H
vm ||
(eV)
Ag
2.49
82.51
5.15
17.93
0.76
0.50
0.60
This draft is published as: Elemental vacancy diffusion database from high-throughput first-principles calculations,
Thomas Angsten, Tam Mayeshiba, Henry Wu, Dane Morgan, New Journal of Physics (2014)
19
Al
3.40
74.50
4.70
16.63
0.62
0.41
0.46
Ar
b
0.02
0.88
7.43
46.11
0.01
0.06
-
Au
2.98
130.58
7.58
18.10
0.40
0.49
0.57
Ba
1.87
8.01
3.38
63.55
1.11
0.34
0.37
Be
3.72
122.57
3.57
7.92
1.04
0.74
0.87
Bi
b
2.38
-
-
31.44
0.00
-
-
Ca
1.91
17.62
3.44
42.39
1.06
0.38
0.42
Cd
0.74
43.26
6.04
22.60
0.25
0.23
0.16
Ce
b
4.49
-
-
26.43
1.23
-
-
Co
4.90
248.34
3.29
10.33
1.67
1.02
1.19
Co
mag
5.12
214.69
4.91
10.85
1.93
0.81
0.78
Cr
b
3.63
-
-
11.77
1.77
-
-
Cs
0.70
1.60
7.60
116.42
0.31
0.12
0.13
Cu
3.47
134.58
5.61
12.00
1.04
0.57
0.69
Fe
4.77
288.39
5.60
10.16
2.43
1.52
1.51
Ga
2.60
44.06
4.37
18.92
0.21
0.12
0.16
Ge
b
3.40
-
-
19.25
0.26
-
-
He
0.01
1.60
3.46
16.54
0.00
0.02
0.01
Hf
6.48
112.95
3.59
22.26
2.26
0.89
1.00
In
2.31
32.84
4.68
27.40
0.31
0.20
0.21
Ir
7.16
339.66
3.32
14.60
1.25
1.57
1.95
K
0.86
3.20
5.95
73.72
0.35
0.12
0.14
Kr
0.02
0.80
6.73
58.10
0.00
0.07
0.07
La
b
4.20
-
-
37.42
1.45
-
-
Li
1.61
13.62
3.82
20.24
0.63
0.10
0.12
Mg
1.50
36.05
4.31
22.85
0.78
0.40
0.42
Mn
3.82
190.66
11.04
10.63
2.51
0.43
0.11
Mo
b
5.91
-
-
15.95
1.96
-
-
Nb
b
6.71
-
-
18.61
2.08
-
-
Ne
0.01
6.41
1.65
19.15
-0.01
a
0.04
0.04
Ni
4.74
134.58
12.07
10.87
1.35
0.69
0.79
Ni
mag
4.81
192.26
5.34
10.94
1.37
0.77
0.89
Os
8.31
406.15
5.04
14.23
3.03
3.03
3.22
P
b
3.09
90.52
3.96
15.12
0.28
0.38
-
Pb
2.92
37.65
4.49
31.51
0.41
0.44
0.41
Pd
3.67
163.42
6.50
15.45
1.10
0.68
0.73
Pt
b
5.39
241.13
6.22
15.77
0.70
0.70
-
Rb
0.76
2.40
6.45
91.19
0.32
0.13
0.12
Re
7.79
370.10
4.67
14.89
3.42
1.79
1.17
Rh
5.59
250.74
5.76
14.18
1.53
1.25
1.47
This draft is published as: Elemental vacancy diffusion database from high-throughput first-principles calculations,
Thomas Angsten, Tam Mayeshiba, Henry Wu, Dane Morgan, New Journal of Physics (2014)
20
Ru
6.68
311.62
5.16
13.81
2.68
2.17
2.18
Sc
4.14
52.87
4.82
24.48
1.87
0.74
0.69
Si
4.04
85.72
4.88
14.35
0.08
0.04
0.26
Sn
3.11
47.26
5.92
27.55
0.40
0.31
0.33
Sr
1.61
11.22
3.77
55.16
0.98
0.36
0.40
Ta
b
8.05
-
-
18.55
2.35
-
-
Tc
6.91
302.01
4.90
14.44
2.85
1.21
0.63
Te
b
2.23
48.87
5.03
31.47
0.25
-
-
Ti
5.49
109.75
5.07
17.29
2.06
0.49
0.59
Tl
2.01
25.63
5.47
30.97
0.40
0.23
0.16
V
b
5.15
-
-
13.75
1.84
-
-
W
b
7.96
-
-
16.32
2.44
-
-
Xe
0.03
0.80
2.32
79.60
0.01
0.07
0.08
Y
4.16
40.05
3.72
32.82
1.87
0.69
0.67
Zn
1.10
73.70
6.02
15.23
0.47
0.34
0.20
Zr
6.25
93.73
4.34
23.44
2.03
0.57
0.70
a
This slightly negative value signifies a lack of stability for this element-structure combination.
b
The instability of these elements in the HCP structure precluded the gathering of certain data.
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